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Philipp Natzke
Philipp Natzke
ETH Zurich
Materials science
Silicon carbide
Voltage
Optoelectronics
Power MOSFET
4
Papers
9
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Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
2022
Microelectronics Reliability
Corinna Martinella
Philipp Natzke
Ruben Garcia Alia
Yacine Kadi
K. Niskanen
Mikko Rossi
Jukka Jaatinen
Heikki Kettunen
Alexander Tsibizov
Ulrike Grossner
Arto Javanainen
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Influence of Process Variations on the Electrical Performance of SiC Power MOSFETs
2020
IEEE Transactions on Electron Devices
Johanna Müting
Philipp Natzke
Alexander Tsibizov
Ulrike Grossner
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Short Circuit Ruggedness of New Generation 1.2 kV SiC MOSFETs
2018
WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
Bhagyalakshmi Kakarla
Thomas Ziemann
Roger Stark
Philipp Natzke
Ulrike Grossner
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Thin layer Ag-Sn transient liquid phase bonding using magnetron sputtering for chip to baseplate bonding
2017
WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
Philipp Natzke
Ulrike Grossner
Jolanta Janczak-Rusch
L. P. H. Jeurgens
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