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H. Oomine

Tokyo Institute of Technology

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(Invited) Engineering high-k/InGaAs Interface for Extremely Scaled Gate Stacks

2015
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Low D it high-k/In 0.53 Ga 0.47 As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction

2013 IEDM | International Electron Devices Meeting
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La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

2013 Solid-state Electronics
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