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X. Yin

City University of New York

10

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526

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Air stabilized (001) p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density

1994 Applied Physics Letters
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Nature of band bending at semiconductor surfaces by contactless electroreflectance

1992 Applied Physics Letters
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Role of excess As in low-temperature-grown GaAs.

1992 Physical Review B
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Photoreflectance study of the surface Fermi level at (001)n-and p-type GaAs surfaces

1992 Journal of Vacuum Science and Technology
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Electromodulation study of GaAs with excess arsenic

1992 Journal of Vacuum Science & Technology B
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Novel contactless mode of electroreflectance

1991 Applied Physics Letters
- X. Yin
- Fred H. Pollak
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In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n‐ and p‐type GaAs surfaces

1991 Journal of Vacuum Science & Technology B
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Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces

1991 Applied Physics Letters
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Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance

1990 Applied Physics Letters
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Citations (73)