Air stabilized (001) p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density
1994
We present a contactless electromodulation study of undoped/p+ GaAs (001) structures, fabricated by molecular beam epitaxy (MBE), which exhibit reduced surface state densities and surface Fermi level values closer to the band edge in relation to other p‐ or n‐type GaAs (001) surfaces. The temperature dependence of the measured barrier height has been explained by a modified current‐transport equation which contains two ‘‘pinning’’ levels (0.25 and 0.5 V relative to the valence band). Measurements were carried out in air and also in situ in the ultrahigh vacuum environment of a MBE chamber soon after growth and before the sample was removed to air.
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