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F.Z. Yan
F.Z. Yan
Field-effect transistor
Electronic engineering
Communication channel
Silicon on insulator
Electrical engineering
3
Papers
14
Citations
0
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Two dimensional device simulation and fabrication of mesa SOI vertical dual carrier field effect transistor with effective channel length of 30nm for switching ASIC and SOC
2005
ASICON | International Conference on ASIC
R. Yang
G.H. Li
Y Z Xu
Y. F. Chao
Z.-M. Tang
Y. H. Yang
B. K. Ma
D.H. Huang
P. Xu
S.G. Shen
C.-L. Lin
C. L. Wu
F.Z. Yan
D. J. Han
Y.L. Ren
L.K. Yu
I.M. Cai
X.N. Tian
Y.Z. Ji
D.S. Du
C. Huang
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Citations (8)
Measurement of source coupled logic "exclusive OR" circuit ring oscillator of SOI Si vertical dual carrier field effect transistor with effective channel length of 5-30nm
2004
SSICT | International Conference on Solid-State and Integrated Circuits Technology
Z.-M. Tang
G.H. Li
R. Yang
Y Z Xu
Y. H. Yang
D.H. Huang
P. Xu
S.G. Shen
C.-L. Lin
F.Z. Yan
D. J. Han
X.N. Tien
Y.Z. Ji
D.S. Du
C. Huang
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Citations (2)
Experimental verification of the principle of operation of building blocks of 0.6 volt Si and SiGe vertical dual carrier field effect transistor FPGA with effective channel length of 5-20 nm
2001
ASICON | International Conference on ASIC
Y Z Xu
L. Chen
Z.M. Tang
Z.-S. Li
C. L. Wu
Y-B Li
G.H. Li
F.Z. Yan
D.S. Zou
P. Xu
D.H. Huang
Y. H. Yang
C. Huang
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Citations (4)
1