Experimental verification of the principle of operation of building blocks of 0.6 volt Si and SiGe vertical dual carrier field effect transistor FPGA with effective channel length of 5-20 nm

The principle of operation of building blocks of 0.6 V Si and SiGe Vertical Dual Carrier Field Effect Transistor FPGA with effective channel length of 5-20 nm is reviewed. Measured data on the experimental verification of the principle of operation are presented.