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Geumbi Mun
Geumbi Mun
KAIST
Thin-film transistor
Semiconductor
Oxide
Atomic layer deposition
Indium
3
Papers
31
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Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition.
2021
ACS Applied Materials & Interfaces
Seung-Hee Lee
Miso Kim
Geumbi Mun
Jong-Beom Ko
Hye-In Yeom
Gwang-Heum Lee
Bonggeun Shong
Sang-Hee Ko Park
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Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator
2017
Physica Status Solidi (a)
Yujin Kim
Kwang Heum Lee
Geumbi Mun
Kyeongwoo Park
Sang-Hee Ko Park
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Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
2016
ACS Applied Materials & Interfaces
Hyo Yeon Kim
Eun Ae Jung
Geumbi Mun
Raphael Edem Agbenyeke
Bo Keun Park
Jin-Seong Park
Seung Uk Son
Dong-Ju Jeon
Sang-Hee Ko Park
Taek Mo Chung
Jeong Hwan Han
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Citations (27)
1