author-photo

Kwang-Seng See

Nanyang Technological University

5

Papers

12

Citations

Citation Trend

Filter By

Papers (4) Sort By

Journal Conference Others

Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology

2008 Microelectronics Reliability
Show All
- Source
- Cite
- Save
Citations (7)
Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide

2005 Japanese Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (1)
Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 µm Dual Gate Oxide CMOS Technology

2005 Japanese Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (0)
Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 μm Dual Gate Oxide CMOS Technology

2004 The Japan Society of Applied Physics
Show All
- Source
- Cite
- Save
Citations (0)