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Pei Zhao

University of Notre Dame

37

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973

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Performance boost using spacer-confined cavity for advanced FinFET technology

2019 Semiconductor Science and Technology
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Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

2019
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Transistor Optimization with Novel Cavity for Advanced FinFET Technology

2018 SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
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A 12nm FinFET Technology Featuring 2nd Generation FinFET for Low Power and High Performance Applications

2018 VLSIT | Symposium on VLSI Technology
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Influence of stress induced CT local layout effect (LLE) on 14nm FinFET

2017 VLSIT | Symposium on VLSI Technology
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Source/drain eSiGe engineering for FinFET technology

2017 Semiconductor Science and Technology
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Strained GaN quantum-well FETs on single crystal bulk AlN substrates

2017 Applied Physics Letters
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Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

2016 arXiv: Materials Science
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Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates a

2015 APL Materials
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Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

2015 Applied Physics Letters
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