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Joerg Jeschke
Joerg Jeschke
Ferdinand-Braun-Institut
Quantum well
Physics
Epitaxy
Laser
Analytical chemistry
4
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46
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Resonator-Length Dependence of Electron-Beam-Pumped UV-A GaN-Based Lasers
2017
IEEE Photonics Technology Letters
Thomas Wunderer
Joerg Jeschke
Zhihong Yang
Mark Teepe
Max Batres
Bernard Vancil
Noble M. Johnson
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Citations (17)
Kinetics of AlGaN metal–organic vapor phase epitaxy for deep-UV applications
2016
Japanese Journal of Applied Physics
A. V. Lobanova
E.V. Yakovlev
Joerg Jeschke
A. Knauer
Markus Weyers
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Citations (3)
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
2015
IEEE Photonics Technology Letters
Joerg Jeschke
Martin Martens
A. Knauer
Viola Kueller
U. Zeimer
Carsten Netzel
Christian Kuhn
Felix Krueger
Christoph Reich
Tim Wernicke
Michael Kneissl
Markus Weyers
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Citations (15)
Spatial inhomogeneities in Al x Ga1−x N quantum wells induced by the surface morphology of AlN/sapphire templates
2015
Semiconductor Science and Technology
U. Zeimer
Joerg Jeschke
A. Mogilatenko
A. Knauer
Viola Kueller
Veit Hoffmann
Christian Kuhn
Tino Simoneit
Martin Martens
Tim Wernicke
Michael Kneissl
Markus Weyers
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Citations (11)
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