Kinetics of AlGaN metal–organic vapor phase epitaxy for deep-UV applications

Al x Ga1− x N layers with high aluminum content of x ~ 0.68–0.73 were grown in an 11 × 2-in. AIX 2400 G3 HT planetary reactor by metal–organic vapor phase epitaxy. Growth trends are analyzed by reaction-transport modeling in a wide range of growth conditions. Gas-phase nucleation resulting in both Al and Ga consumption into nanoparticles is a major mechanism affecting the growth efficiencies of AlN and GaN. Process windows suitable to grow multiple quantum wells (MQWs) for deep UV applications are found for a range of pressures, temperatures, and V/III ratios.