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S. Blässer
S. Blässer
CERN
Atomic physics
Lattice (order)
Crystal
Ion implantation
Ion
4
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31
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alpha-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 23-27, 1995)
1996
Ion Beam Modification of Materials
J Dewachter
S. Blässer
H. Hofsäss
Sg Jahn
M. Lindroos
R Moons
Hugo Pattyn
M. Restle
André Vantomme
Ulrich Wahl
P VanDuppen
Guido Langouche
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Lattice location of ion-implanted radioactive dopants in compound semiconductors
1990
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
S. Winter
S. Blässer
H. Hofsäss
Sg Jahn
G. Lindner
Ulrich Wahl
E. Recknagel
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Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
1989
Materials Science Forum
S. Winter
S. Blässer
H. Hofsäss
Sg Jahn
G. Lindner
E. Recknagel
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Site changes of ion-implanted Li in GaAs below 300 K.
1989
Physical Review Letters
G. Lindner
S. Winter
H. Hofsäss
Sg Jahn
S. Blässer
E. Recknagel
G. Weyer
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Citations (17)
1