Lattice location of ion-implanted radioactive dopants in compound semiconductors

Abstract The channeling and blocking effects of alpha and beta particles emitted in nuclear decay of radioactive probes allow a localization of ion-implanted impurities in single crystals at very small concentrations and low implantation fluences. Using the isotope 8 Li as an interstitial probe, indications for a different mobility of vacancies in GaAs and GaP below 500 K were obtained by this technique. The thermal recovery of structural defects in heavy-ion-implanted GaAs was investigated using radioactive 111m Cd and 112 In probes. A prominent recovery stage was observed in the temperature regime between 200 and 400 K, in which also the mobilization of Ga vacancies was detected in GaAs with 8 Li probes.