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Melisa Ekin Gulseren
Melisa Ekin Gulseren
Bilkent University
Optoelectronics
High-electron-mobility transistor
Threshold voltage
normally off
Leakage (electronics)
5
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6
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0
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Design, fabrication, and characterization of normally-off GaN HEMTS
2019
Melisa Ekin Gulseren
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Investigation of a Hybrid Approach for Normally-Off GaN HEMTs Using Fluorine Treatment and Recess Etch Techniques
2019
IEEE Journal of the Electron Devices Society
Gokhan Kurt
Melisa Ekin Gulseren
Gurur Salkim
Sertaç Ural
Omer Ahmet Kayal
Mustafa Kemal Öztürk
Bayram Butun
Mehmet Kabak
Ekmel Ozbay
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Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
2019
Melisa Ekin Gulseren
Gokhan Kurt
Turkan Gamze Ulusoy Ghobadi
Amir Ghobadi
Gurur Salkim
Mustafa Ozturk
Bayram Butun
Ekmel Ozbay
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Citations (1)
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
2019
Solid-state Electronics
Gokhan Kurt
Melisa Ekin Gulseren
Turkan Gamze Ulusoy Ghobadi
Sertaç Ural
Omer Ahmet Kayal
Mustafa Ozturk
Bayram Butun
Mehmet Kabak
Ekmel Ozbay
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Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
2019
Melisa Ekin Gulseren
Berkay Bozok
Gokhan Kurt
Omer Ahmet Kayal
Mustafa Kemal Öztürk
Sertaç Ural
Bayram Butun
Ekmel Ozbay
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