Old Web
English
Sign In
Acemap
>
Paper
>
Design, fabrication, and characterization of normally-off GaN HEMTS
Design, fabrication, and characterization of normally-off GaN HEMTS
2019
Melisa Ekin Gulseren
Keywords:
Atomic layer deposition
Threshold voltage
Optoelectronics
High-electron-mobility transistor
Materials science
Power electronics
Fabrication
normally off
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]