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H.Q. Luc
H.Q. Luc
Optoelectronics
Materials science
Dopant
Silicon
Ferroelectricity
3
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Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique
2018
The Japan Society of Applied Physics
Y. D. Jin
H.Q. Luc
W. J. Lin
S.K. Yang
Y.K. Zhang
B.H. Do
H.S. Huynh
H.M.T. Ha
P. Huang
W.C. Hsu
C. Y. Lin
Edward Yi Chang
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InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics
2018
The Japan Society of Applied Physics
H.Q. Luc
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Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process
2017
H.Q. Luc
W. J. Lin
S.K. Yang
C. C. Chang
C.-C.C. Fan
B.H. Do
M. T. H. Ha
H.S. Huynh
D.Y. Jin
A.T. Nguyen
C. Y. Lin
E. Y. Chang
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