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H.M.T. Ha
H.M.T. Ha
Optoelectronics
Materials science
Annealing (metallurgy)
Microwave
microwave annealing
2
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Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique
2018
The Japan Society of Applied Physics
Y. D. Jin
H.Q. Luc
W. J. Lin
S.K. Yang
Y.K. Zhang
B.H. Do
H.S. Huynh
H.M.T. Ha
P. Huang
W.C. Hsu
C. Y. Lin
Edward Yi Chang
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Low-Temperature Microwave Annealing Process for In 0.53 Ga 0.47 As MOSFETs
2017
J. W. Lin
Q.H Luc
K. S. Yang
C. C. Chang
C. C. Fan-Chiang
H.B Do
H.M.T. Ha
S.H. Huynh
Y. D. Jin
T. A. Nguyen
Y C Lin
E. Y. Chang
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