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Yoshiko Araki
Yoshiko Araki
Toshiba
Flash memory
Parallel computing
Non-volatile memory
Computer science
Electronic engineering
3
Papers
73
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2024
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A 3.3 V-only 16 Mb flash memory with row-decoding scheme
1996
ISSCC | International Solid-State Circuits Conference
Shigeru Atsumi
Akira Umezawa
Masao Kuriyama
Hironori Banba
Nobuaki Ohtsuka
Naoto Tomita
Y. Iyama
Takeshi Miyaba
R. Sudoh
Eiji Kamiya
Masao Tanimoto
Y. Hiura
Yoshiko Araki
Eiji Sakagami
N. Arai
S. Mori
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Citations (7)
Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices
1996
IEEE Transactions on Electron Devices
S. Mori
Yoshiko Araki
Muneharu Sato
Hisataka Meguro
Hiroaki Tsunoda
Eiji Kamiya
Kuniyoshi Yoshikawa
N. Arai
Eiji Sakagami
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Citations (66)
TP 2.6: A 3.3V-only 16Mb Flash Memory with Row-Decoding Scheme
1996
International Solid-State Circuits Conference
Shigeru Atsumi
Akira Umezawa
Masao Kuriyama
Hironori Banba
Nobuaki Ohtsuka
Naoto Tomita
Takeshi Miyaba
Eiji Kamiya
Masao Tanimoto
Yohei Hiura
Yoshiko Araki
N. Arai
S. Mori
Toshiba Microelectronics Corp
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