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J. Vandersand
J. Vandersand
University of Tennessee
Electronic engineering
Field-effect transistor
Silicon on insulator
Electrical engineering
Transistor
5
Papers
57
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Complementary Paired G4FETs as Voltage-Controlled NDR Device
2009
Mohammad Mojarradi
Suheng Chen
B.J. Blalock
Chuck Britton
Ben Prothro
J. Vandersand
Ron Schrimph
Sorin Cristoloveanu
Kerem Akavardar
P. Gentil
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Four-Gate Transistor Voltage-Controlled Negative Differential Resistance Device and Related Circuit Applications
2006
SOI | International SOI Conference
K. Akarvardar
Suheng Chen
J. Vandersand
Benjamin J. Blalock
Ronald D. Schrimpf
B. Prothro
C.L. Britton
S. Cristoloveanu
Pierre Gentil
M.M. Mojarradi
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Citations (17)
SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI
2006
International Journal of High Speed Electronics and Systems
Jinman Yang
Asha Balijepalli
Trevor Thornton
J. Vandersand
Benjamin J. Blalock
Michael E. Wood
Mohammad Mojarradi
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Citations (26)
SOI four-gate transistors (G/sup 4/-FETs) for high voltage analog applications
2005
ESSCIRC | European Solid-State Circuits Conference
Suheng Chen
J. Vandersand
B.J. Blalock
K. Akarvardar
S. Cristoloveanu
M. Mojarradi
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Citations (3)
CMOS Compatible SOI MESFETs for Extreme Environment Applications
2005
AeroConf | IEEE Aerospace Conference
J. Vandersand
V. Kushner
J. Yane
Benjamin J. Blalock
Trevor Thornton
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Citations (11)
1