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E. Behouche

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A 30 GHz f T Quasi Self-Aligned Single Poly Emitter Bipolar Technology

2010 DRC | Device Research Conference
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A single-polysilicon quasi self-aligned npn bipolar technology with 30 GHz f/sub T/ and 40 GHz f/sub max/

1997 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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A single-polysilicon quasi self-aligned npn bipolar technology with 30 GHz fT and 40 GHz fmax

1997 Academic Radiology
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A 30-GHz fT quasi-self-aligned single-poly bipolar technology

1997 IEEE Transactions on Electron Devices
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A 30 GHz f T Quasi Self-Aligned Single Poly Emitter Bipolar Technology

1996 ESSDERC | European Solid-State Device Research Conference
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Citations (2)