A 30 GHz f T Quasi Self-Aligned Single Poly Emitter Bipolar Technology

Single polysilicon NPN transistors with quasi-self aligned structure fabricated in a low complexity 0.5 ?m-BiCMOS technology demonstrate ideal static characteristics and good frequency performances. The obtained 30 GHz maximum fT and 4.2 V breakdown voltage are comparable to the best reported results for single poly self-aligned transistors.