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H. W. Kim
H. W. Kim
Samsung
Nanotechnology
Resist
Materials science
Immersion (virtual reality)
Charge density
3
Papers
8
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0
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Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications
2016
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
S. Dhar
Hyeon-Kyun Noh
Sung-jin Kim
H. W. Kim
Zhenhua Wu
Won-sok Lee
Krishna Kumar Bhuwalka
Jongchol Kim
Changwook Jeong
Uihui Kwon
S. Maeda
K.H. Lee
Anh-Tuan Pham
Seonghoon Jin
W. S. Choi
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Citations (3)
Advances in Immersion Related Defectivity on XT:1250i at IMEC
2006
Journal of Photopolymer Science and Technology
M. Meanhoudt
Michael Kocsis
Nickolay Stepanenko
S. OBrien
D. Van den Heuvel
Diziana Vangoidsenhoven
Roel Gronheid
Michael Benndorf
Kathleen Nafus
Wim Fyen
H. W. Kim
Shinji Kishimura
Kurt G. Ronse
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Citations (2)
Investigation of New Slection Citeria for an Otimized Imersion Process
2006
Journal of Photopolymer Science and Technology
Monique Ercken
Roel Gronheid
Philippe Foubert
N. Stepenenko
Tom Vandeweyer
Ivan Pollentier
H. W. Kim
Shinji Kishimura
E. Tenaglia
Christie Delvaux
M. Moelants
C. Baerts
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Citations (3)
1