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K. Hirche
K. Hirche
Electronic engineering
algan gan
Optoelectronics
Physics
Voltage
4
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50
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Submicron-AlGaN/GaN MMICs for space applications
2013
IMS | International Microwave Symposium
R. Quay
P. Waltereit
Jutta Kuhn
Peter Brückner
M. van Heijningen
P. Jukkala
K. Hirche
O. Ambacher
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Single Event Effect Analysis on DC and RF Operated AlGaN/GaN HEMTs
2013
IEEE Transactions on Nuclear Science
M. Rostewitz
K. Hirche
J. Lätti
E. Jutzi
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High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10 5 hours
2012
EMICC | European Microwave Integrated Circuit Conference
P. Waltereit
Jutta Kuhn
R. Quay
F. van Raay
M. Dammann
Markus Cäsar
S. Müller
M. Mikulla
O. Ambacher
J. Lätti
M. Rostewitz
K. Hirche
J. Daubler
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Degradation effects and stabilization of InAlAs/InGaAs-HFETs
1996
IPRM | International Conference on Indium Phosphide and Related Materials
K. Weigel
M. Warth
K. Hirche
K. Heime
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Citations (12)
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