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W.M. Duncan

North Carolina State University

6

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26

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Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate

1991 Applied Physics Letters
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Electronic excited-state analysis by magnetic circular dichroism of d6 (alkylamino)pentacarbonyl complexes, [M(CO)5A]0 (M = chromium, molybdenum, tungsten)

1980 Journal of the American Chemical Society
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Electronic structure of the LPE grown semiconductor, p-ZnSnAs2, explored by newly-observed laser-excited photoluminescence

1980 Journal of Luminescence
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Magnetic circular dichroism and cryogenic optical study of photochemically important, pnictide-containing transition metal carbonyls

1980 The Journal of Physical Chemistry
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The synthesis and layer growth of zinc silicon arsenide, ZnSiAs2, by chemical vapor deposition in an open flow system

1977 Materials Research Bulletin
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