Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate

The two main problems, carbon contamination and a low growth rate, facing atomic layer epitaxy (ALE) of GaAs are addressed. A reactor was designed to process 2 in. wafers with a growth rate as high as 0.6 μm/h. Background carbon concentration less than 1015 cm−3 and a 77 K mobility of 30 000 cm2/V s were measured. The new reactor is based on the concept of rotating the substrate between streams of reactant gases with provisions to shear off and sweep away the thermal boundary layer. Self‐limited growth was observed for a growth temperature as high as 600 °C.