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C. Papadas

École nationale supérieure d'électronique et de radioélectricité de Grenoble

13

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101

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Silicon Nitridation by Nitric Oxide (NO) for Ta2O5 Gate Dielectric Application in MOS Devices

1999 ESSDERC | European Solid-State Device Research Conference
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Transport Properties of the SiO(2)/Ta(2)O(5) stack as Gate Dielectric in CMOS Processes

1998 ESSDERC | European Solid-State Device Research Conference
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Stress induced leakage current dependence on oxide thickness, technology and stress level

1997 ESSDERC | European Solid-State Device Research Conference
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Temperature Dependence of Fowler-Nordheim Emission Tunneling Current in MOS Structures

1994 Ndt & E International
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On the Charge Build-Up Mechanisms in Very Thin Insulator Layers

1994 Ndt & E International
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Impact of the Furnace Nitridation Temperature in N2O Ambient on the Quality of the Si/SiO2 System

1994 Ndt & E International
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Model for programming window degradation in FLOTOX EEPROM cells

1992 IEEE Electron Device Letters
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Reliability Properties of Rapid Thermal Processed Nitrided Oxides after Fowler-Nordheim Electrical Stress

1992 ESSDERC | European Solid-State Device Research Conference
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Influence of tunnel oxide thickness variation on the programmed window of FLOTOX EEPROM cells

1992 Solid-state Electronics
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Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique

1992 Review of Scientific Instruments
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