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Hirofumi Inoue

Tohoku University

4

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High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions.

2018 INTERMAG | IEEE International Magnetics Conference
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14ns write speed 128Mb density Embedded STT-MRAM with endurance>10 10 and 10yrs retention@85°C using novel low damage MTJ integration process

2018 IEDM | International Electron Devices Meeting
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1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning

2018 IMW | International Memory Workshop
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