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B.C. Zhang
B.C. Zhang
Chartered Semiconductor Manufacturing
Analytical chemistry
Silicon
Chemical vapor deposition
Spectroscopy
Backscatter
4
Papers
36
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Uniform Void-Free Epitaxial CoSi2 Formation on STI Bounded Narrow Si(100) Lines by Template Layer Stress Reduction
2004
Electrochemical and Solid State Letters
C. S. Ho
Kin Leong Pey
C. H. Tung
B.C. Zhang
Kheng Chok Tee
G. Karunasiri
S. J. Chua
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Citations (1)
Characterization of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
2004
Applied Surface Science
Kaoru Nakajima
S. Joumori
Motofumi Suzuki
Kuniko Kimura
T. Osipowicz
K.L. Tok
J.Z. Zheng
Alex See
B.C. Zhang
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Citations (8)
Effects of first rapid thermal annealing temperature on Co silicide formation
2003
Solid-state Electronics
H.J. Peng
Zexiang Shen
E.H. Lim
C.W. Lai
R. Liu
Andrew Thye Shen Wee
A. Sameer
Jiyan Dai
B.C. Zhang
Jia Zhen Zheng
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Citations (3)
Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
2003
Applied Physics Letters
Kaoru Nakajima
S. Joumori
Motofumi Suzuki
Kuniko Kimura
T. Osipowicz
K.L. Tok
J.Z. Zheng
Alex See
B.C. Zhang
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Citations (24)
1