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Hans-Jürgen Engelmann

Helmholtz-Zentrum Dresden-Rossendorf

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Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

2020 Microelectronic Engineering
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Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

2020 Semiconductor Science and Technology
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Computer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition

2019 Journal of Applied Physics
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Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

2019 Semiconductor Science and Technology
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Citations (2)