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Marco Silvestri
Marco Silvestri
Infineon Technologies
Physics
Luminescence
Threshold voltage
Optoelectronics
Transistor
3
Papers
33
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Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress
2018
IEEE Transactions on Electron Devices
Maria Ruzzarin
Matteo Meneghini
A. Barbato
V. Padovan
O. Haeberlen
Marco Silvestri
Thomas Detzel
Gaudenzio Meneghesso
Enrico Zanoni
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Citations (31)
Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin
2017
IEEE Transactions on Electron Devices
Matteo Meneghini
A. Barbato
Isabella Rossetto
Andrea Favaron
Marco Silvestri
Simone Lavanga
Haifeng Sun
Helmut Brech
Gaudenzio Meneghesso
Enrico Zanoni
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Citations (2)
Decoupling of epitaxy‐related trapping effects in AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors
2016
Physica Status Solidi (a)
Martin Huber
Gilberto Curatola
Gianmauro Pozzovivo
Ingo Daumiller
Lauri Knuuttila
Marco Silvestri
A. Bonanni
Anders Lundskog
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