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O. Haeberlen
O. Haeberlen
Infineon Technologies
Engineering
Electronic engineering
Reliability engineering
Physics
Electron
5
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35
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Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress
2018
IEEE Transactions on Electron Devices
Maria Ruzzarin
Matteo Meneghini
A. Barbato
V. Padovan
O. Haeberlen
Marco Silvestri
Thomas Detzel
Gaudenzio Meneghesso
Enrico Zanoni
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Citations (31)
Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
2018
IEDM | International Electron Devices Meeting
Matteo Meneghini
A. Barbato
Matteo Borga
C. De Santi
Marco Barbato
Steve Stoffels
M. Zhao
Niels Posthuma
Stefaan Decoutere
O. Haeberlen
Thomas Detzel
Gaudenzio Meneghesso
Enrico Zanoni
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Citations (3)
{S}canning {M}icrowave {M}icroscopy for {E}lectronic {D}evice {A}nalysis on {N}anometre {S}cale
2016
Microelectronics Reliability
S. Hommel
N. Killat
A. Altes
Thomas Schweinboeck
Doris Schmitt-Landsiedel
M. Silvestri
O. Haeberlen
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Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale
2016
Microelectronics Reliability
S. Hommel
N. Killat
A. Altes
Thomas Schweinboeck
Doris Schmitt-Landsiedel
M. Silvestri
O. Haeberlen
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ナノメートルスケールの電子デバイス解析のための走査マイクロ波顕微鏡法【Powered by NICT】
2016
Microelectronics Reliability
S. Hommel
N. Killat
A. Altes
Thomas Schweinboeck
Doris Schmitt-Landsiedel
M. Silvestri
O. Haeberlen
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