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O. Haeberlen
O. Haeberlen
Infineon Technologies
Engineering
Electronic engineering
Reliability engineering
Physics
Electron
5
Papers
35
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Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress
2018
IEEE Transactions on Electron Devices
Maria Ruzzarin
Matteo Meneghini
A. Barbato
V. Padovan
O. Haeberlen
Marco Silvestri
Thomas Detzel
Gaudenzio Meneghesso
Enrico Zanoni
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{S}canning {M}icrowave {M}icroscopy for {E}lectronic {D}evice {A}nalysis on {N}anometre {S}cale
2016
Microelectronics Reliability
S. Hommel
N. Killat
A. Altes
Thomas Schweinboeck
Doris Schmitt-Landsiedel
M. Silvestri
O. Haeberlen
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Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale
2016
Microelectronics Reliability
S. Hommel
N. Killat
A. Altes
Thomas Schweinboeck
Doris Schmitt-Landsiedel
M. Silvestri
O. Haeberlen
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