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D. J. Wolford

IBM
University of Illinois at Urbana–Champaign

92

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1945

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Interface-free GaAs structures—from bulk to the quantum limit

2020
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Nitrogen implantation in GaAs1x P x . II. Annealing properties

2014
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Properties of highpurity Al x Ga1x As grown by the metalorganic vaporphaseepitaxy technique using methyl precursors

2014
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P. Vogl - Deep Trap Review Article

2014
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Nitrogen implantation in GaAs1x P x . I. Photoluminescence properties

2014
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Theory of Core Exciton Binding Energies for Excitons Near Interfaces

2009 International Journal of Quantum Chemistry
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Intrinsic, heterointerface excitonic states in GaAs(n)/Al sub 0. 3 Ga sub 0. 7 As(p) double heterostructures

2008
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N Traps Under Pressure in the Dilute GaAsN x Limit

2000
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Lifetimes in N-doped GaAs Under Pressure

2000
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Stimulated Emission of Nitrogen Traps in GaAs:N

2000
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