Properties of highpurity Al x Ga1x As grown by the metalorganic vaporphaseepitaxy technique using methyl precursors

T. F. Kuech, D. J. Wolford, E. Veuhoff, V. Deline, P. M. Mooney, R. Potemski, and J. Bradley Citation: Journal of Applied Physics 62, 632 (1987); doi: 10.1063/1.339792 View online: http://dx.doi.org/10.1063/1.339792 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/62/2?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Very high carbon doping concentration in Al x Ga1x As grown by metalorganic vapor phase epitaxy usingtrimethylaluminum as a doping precursor J. Appl. Phys. 79, 3554 (1996); 10.1063/1.361377 Radiatively controlled lifetimes in Al x Ga1x As grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 64, 1561 (1994); 10.1063/1.111865 Excitonic photoluminescence spectra of Al x Ga1x As grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 58, 1274 (1991); 10.1063/1.104334 High quality Al x Ga1x As grown by organometallic vapor phase epitaxy using trimethylamine alane as thealuminum precursor Appl. Phys. Lett. 58, 77 (1991); 10.1063/1.104450 Midgap states in metalorganic vapor phase epitaxy grown Al x Ga1 x As J. Appl. Phys. 68, 3394 (1990); 10.1063/1.346344