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Nobi Fuchigami
Nobi Fuchigami
Atomic layer deposition
Semiconductor
Chemistry
Thin film
Silicon nitride
3
Papers
26
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Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
2016
Journal of Vacuum Science and Technology
Stephen L. Weeks
Greg Nowling
Nobi Fuchigami
Michael Bowes
Karl A. Littau
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Impact of thermal treatments on the schottky barrier height reduction at the Ti-TiO x -Si interface for contact resistance reduction
2014
SNW | IEEE Silicon Nanoelectronics Workshop
Albert Lee
Abhijit Pethe
Amol Joshi
Guillaume Bouche
Shao-Ming Koh
Hiroaki Nimii
Salil Mujumdar
Zhendong Hong
Nobi Fuchigami
Ira Lim
Ashish Bodke
M. Raymond
Paul R. Besser
Sean Barstow
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Atomic layer deposition of HfxAlyCz as a work function material in metal gate MOS devices
2014
Journal of Vacuum Science and Technology
Albert Lee
Nobi Fuchigami
Divya Pisharoty
Zhendong Hong
Ed Haywood
Amol Joshi
Salil Mujumdar
Ashish Bodke
Olov Karlsson
Hoon Kim
Kisik Choi
Paul R. Besser
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Citations (7)
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