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Seung Wan Hong
Seung Wan Hong
Samsung
Electronic engineering
Engineering
Burn-in
Leakage (electronics)
Dram
5
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24
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32nm 3-bit 32Gb NAND Flash Memory with DPT (d̲ouble p̲atterning t̲echnology) process for mass production
2010
VLSIT | Symposium on VLSI Technology
Bong Tae Park
Jai Hyuk Song
Eun-suk Cho
Seung Wan Hong
Jae Youn Kim
Yong-ju Choi
Yong-Seok Kim
Seung-Jun Lee
Chi Kyoung Lee
Dae-Woong Kang
Dong-jun Lee
Byoung Taek Kim
Yong Joon Choi
Woon-kyung Lee
Jeong-Hyuk Choi
Kang-Deog Suh
Tae-Sung Jung
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16-Gigabit, 8-level NAND flash memory with 51nm 44-cell string technology
2008
ESSDERC | European Solid-State Device Research Conference
Tae Kyung Kim
Sung-nam Chang
Seung Wan Hong
Dong Hyuk Chae
Keonho Lee
Jeong-Hyuk Choi
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Evaluation of STI degradation causing DRAM standby current failure in burn-in mode operation using a carrier injection method
2002
IRPS | International Reliability Physics Symposium
Seung Wan Hong
Gyo-Young Jin
H.W. Seo
Donghee Lee
Jai Hyuk Song
Jinhyun Noh
Y. C. Oh
Jungdong Kim
Deog-Bae Kim
Hyun-Ho Kim
Dae-Joong Won
Wonshik Lee
Du Heon Song
Kyongtaek Lee
Woon-kyung Lee
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Citations (3)
Charge trapping induced DRAM data retention time degradation under wafer-level burn-in stress
2002
IRPS | International Reliability Physics Symposium
Hyeong Won Seo
Gyo-Young Jin
Kihoon Yang
Yun-Jae Lee
Joo-hyun Lee
Du Heon Song
Yong-Chol Oh
Jun-Yong Noh
Seung Wan Hong
Dong-Hyun Kim
Jin-Yang Kim
Hyeong-Hoon Kim
Dae-Joong Won
Won-Seong Lee
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Citations (10)
A planar vibratory gyroscope using electromagnetic force
1998
Sensors and Actuators A-physical
Sang Hun Lee
Seung Wan Hong
Yong-Kweon Kim
Seung-Ki Lee
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Citations (4)
1