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Bernard Scanlan
Bernard Scanlan
Oxford Instruments
Crystallography
Metalorganic vapour phase epitaxy
Heterojunction
Physics
Cathodoluminescence
2
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5
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0
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Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire
2010
Physica Status Solidi (a)
Alexander Usikov
Vitali Soukhoveev
Lisa Shapovalov
Alexander Syrkin
Vladimir Ivantsov
Bernard Scanlan
Alexey Nikiforov
Andre Strittmatter
Noble M. Johnson
Jian-Guo Zheng
Philippe Spiberg
Hussein S. El-Ghoroury
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Croissance de nitrure de gallium à plan m {10-10} non polaire planar par épitaxie en phase vapeur de l'hydrure (hvpe)
2010
Philippe Spiberg
Hussein S. El-Ghoroury
A. Usikov
Alexander Syrkin
Bernard Scanlan
Vitali Soukhoveev
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