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M. Drechsler

Technische Universität München

19

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385

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Optically detected cyclotron resonance properties of high purity ZnSe epitaxial layers grown on GaAs

1997 Applied Physics Letters
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Residual Impurities And Transport Properties of High Purity Movpe Gaas

1996 MRS Proceedings
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Dispersion relation, electron and hole effective masses in InxGa1−xAs single quantum wells

1996 Journal of Applied Physics
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Electron mobilities in MOVPE-grown ZnSe quantum wells

1996 Journal of Crystal Growth
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ELECTRON EFFECTIVE MASS AND NONPARABOLICITY IN GA0.47IN0.53AS/INP QUANTUM WELLS

1996 Physical Review B
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Electron effective masses in 4H SiC

1995 Applied Physics Letters
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Conductivity measurements on GaN grown by OMVPE and HVPE

1995 MRS Proceedings
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The Effective Mass Donor in Galliumnitride

1995 Materials Science Forum
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Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

1995 Japanese Journal of Applied Physics
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SPIN SPLITTING OF CYCLOTRON RESONANCE IN THE CONDUCTION BAND OF ZNTE

1994 Physical Review B
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