Electron mobilities in MOVPE-grown ZnSe quantum wells

Abstract We studied ZnSe single quantum wells with well widths from 4 to 1 nm by optically detected cyclotron resonance (ODCR). In the samples grown by metal organic vapour phase epitaxy, where the residual shallow donor concentration is still of the order of mid 10 16 cm −3 , we find maximum electron mobilities of 46 000 cm 2 /V·s at low temperatures. The mechanism causing the cyclotron resonances to be observed in the luminescence is dominantly an energy transfer by heating the crystal lattice.