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Ilgyou Shin
Ilgyou Shin
Samsung
Materials science
Epitaxy
Dislocation
Condensed matter physics
Annealing (metallurgy)
5
Papers
19
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Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001)
2019
Microelectronic Engineering
Jinbum Kim
Hyangsook Lee
Jung-Hwa Kim
Ilgyou Shin
Jeongho Yoo
Seok-Hoon Kim
Seongheum Choi
Jinyong Kim
Taejin Park
Y. H. Kim
Ki-Hyun Hwang
Eunha Lee
Hyoungsub Kim
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Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation
2019
Journal of Alloys and Compounds
Jinbum Kim
Ilgyou Shin
Taejin Park
Jinyong Kim
Seongheum Choi
Sungho Lee
Seongpyo Hong
Hyung-Ik Lee
Jung-Yeon Won
Tae-Gon Kim
Y. H. Kim
Ki-Hyun Hwang
Hoo-Jeong Lee
Hyoungsub Kim
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Citations (1)
TEM based dislocation auto analysis flow of advanced logic devices
2018
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
Seon-Young Lee
Ilgyou Shin
Sung-Bo Shim
A. A. Schmidt
Inkook Jang
Dae Sin Kim
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Dependency analysis of line edge roughness in electron-beam lithography
2015
Microelectronic Engineering
X. Zhao
Soo-Young Lee
Jung-Hwan Choi
Suk-joo Lee
Ilgyou Shin
C.-U. Jeon
Byung Gook Kim
Hee-Kwun Cho
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Citations (6)
A fast path-based method for 3-D resist development simulation
2014
Microelectronic Engineering
Q. Dai
R. Guo
Soo-Young Lee
Jung-Hwan Choi
Suk-joo Lee
Ilgyou Shin
C.-U. Jeon
Byung Gook Kim
Hee-Kwun Cho
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Citations (12)
1