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Chi-Feng Hsieh
Chi-Feng Hsieh
National Chiao Tung University
Analytical chemistry
Metalorganic vapour phase epitaxy
High-electron-mobility transistor
Optoelectronics
Chemical vapor deposition
5
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6
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The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method
2016
Journal of Electronic Materials
Wei-Ching Huang
Chung-Ming Chu
Chi-Feng Hsieh
Yuen-Yee Wong
Kai-Wei Chen
Wei-I Lee
Yung-Yi Tu
Edward Yi Chang
Chang Fu Dee
Burhanuddin Yeop Majlis
S. L. Yap
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Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
2015
Japanese Journal of Applied Physics
Wei-Ching Huang
Kuan-Shin Liu
Yuen-Yee Wong
Chi-Feng Hsieh
Edward Yi Chang
Heng-Tung Hsu
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The effects of growth parameters on the electrical properties in InAlN/AlN/GaN high-electron-mobility transistors (HEMTs)
2014
ICSE | IEEE International Conference on Semiconductor Electronics
Wei-Ching Huang
Yuen-Yee Wong
Kuan-Shin Liu
Chi-Feng Hsieh
Edward Yi Chang
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Effect of Pressure on InAlN Films Grown by MOCVD for HEMT Application
2013
Wei-Ching Huang
Kusan-Shin Liu
Yuen-Yee Wong
Chi-Feng Hsieh
Edward Yi Chang
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The parasitic reaction during the MOCVD growth of AlInN material
2012
ICSE | IEEE International Conference on Semiconductor Electronics
Wei-Ching Huang
Yuen-Yee Wong
Kusan-Shin Liu
Chi-Feng Hsieh
Edward Yi Chang
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