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Tomas Palacios
Tomas Palacios
Charles Stark Draper Laboratory
Optoelectronics
Transistor
Materials science
Electronic engineering
Passivation
3
Papers
7
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Charge Collection Mechanism in AlGaN/GaN MOS High Electron Mobility Transistors.
2013
IEEE Transactions on Nuclear Science
Gyorgy Vizkelethy
Isaak K. Samsel
En Xia Zhang
Nicolas C. Hooten
Erik D. Funkhouser
William G. Benett
Robert A. Reed
Ronald D. Schrimpf
Michael W. McCurdy
Daniel M. Fleetwood
Robert A. Weller
Xiao Sun
T.P. Ma
Omair I. Saadat
Tomas Palacios
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A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers
2012
MWSCAS | International Midwest Symposium on Circuits and Systems
Nick L. Marcoux
Christopher J. Fisher
Doug White
John Lachapelle
Tomas Palacios
Omair Saadat
Sameer Sonkusale
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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation
2009
Shiping Guo
José María Tirado
Xiang Gao
Omair I. Saadat
Jae W. Chung
Tomas Palacios
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Citations (5)
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