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Charge Collection Mechanism in AlGaN/GaN MOS High Electron Mobility Transistors.
Charge Collection Mechanism in AlGaN/GaN MOS High Electron Mobility Transistors.
2013
Gyorgy Vizkelethy
Isaak K. Samsel
En Xia Zhang
Nicolas C. Hooten
Erik D. Funkhouser
William G. Benett
Robert A. Reed
Ronald D. Schrimpf
Michael W. McCurdy
Daniel M. Fleetwood
Robert A. Weller
Xiao Sun
T.P. Ma
Omair I. Saadat
Tomas Palacios
Keywords:
Atomic physics
Electron mobility
Transistor
Materials science
Optoelectronics
algan gan
high electron
Correction
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