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Kaitlyn L. Ryder
Kaitlyn L. Ryder
Goddard Space Flight Center
Absorbed dose
JFET
Integrated circuit
Field-effect transistor
Optoelectronics
4
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Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology
2019
Jean-Marie Lauenstein
Philip G. Neudeck
Kaitlyn L. Ryder
Edward P. Wilcox
Liang-Yu Chen
Martin A. Carts
Susan Y. Wrbanek
John D. Wrbanek
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NASA Goddard Space Flight Center's Compendium of Total Ionizing Dose, Displacement Damage Dose, and Single-Event Effects Test Results
2019
Alyson D. Topper
Martha V. OBryan
Megan C. Casey
Jean-Marie Lauenstein
Scott D. Stansberry
Michael J. Campola
Edward P. Wilcox
Ray Ladbury
Melanie D. Berg
Edward J. Wyrwas
Kaitlyn L. Ryder
Kenneth A. LaBel
Jonathan A. Pellish
Peter J. Majewicz
Donna J. Cochran
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Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology
2019
REDW | Radiation Effects Data Workshop
Jean-Marie Lauenstein
Philip G. Neudeck
Kaitlyn L. Ryder
Edward P. Wilcox
Liang-Yu Chen
Martin A. Carts
Susan Y. Wrbanek
John D. Wrbanek
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Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology
2018
Kaitlyn L. Ryder
Jean-Marie Lauenstein
Ted Wilcox
Marty Carts
Philip G. Neudeck
Susan Y. Wrbanek
Robert Buttler
Liang-Yu Chen
Danny Spina
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