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T. Ernst

École nationale supérieure d'électronique et de radioélectricité de Grenoble

3

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Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture

2002 Solid-state Electronics
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Characterization and Modeling of Advanced SOI Materials and Devices

2002
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Recombination Current in Fully-Depleted SOI DIODES: Compact Model and Lifetime Extraction

2000
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