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Mine Toshiyuki
Mine Toshiyuki
Materials science
Phase-change memory
Optoelectronics
Electronic engineering
Diode
7
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16
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Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes
2012
Symposium on VLSI Technology
Kinoshita Masaharu
Sasago Yoshitaka
Minemura Hiroyuki
Anzai Yumiko
Tai Mitsuharu
Fujisaki Yoshihisa
Kusaba Shuichi
Morimoto Tadao
Takahama Takashi
Mine Toshiyuki
Shima Akio
Yonamoto Yoshiki
Kobayashi Takashi
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Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput
2011
Symposium on VLSI Technology
Sasago Yoshitaka
Kinoshita Masaharu
Minemura Hiroyuki
Anzai Yumiko
Tai Mitsuharu
Kurotsuchi Kenzo
Morita Seiichi
Takahashi Toshikazu
Takahama Takashi
Morimoto Tadao
Mine Toshiyuki
Shima Akio
Kobayashi Takashi
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Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode
2009
Sasago Yoshitaka
Kinoshita Masaharu
Morikawa Takahiro
Kurotsuchi Kenzo
Hanzawa Satoru
Mine Toshiyuki
Shima Akio
Fujisaki Yoshihisa
Moriya Hiroshi
Takaura Norikatsu
Torii Kazuyoshi
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A Fully Logic-Process-Compatible, SESO-memory Cell with 0.1-FIT/Mb Soft Error, 100-MHz Random Cycle, and 100-ms Retention
2008
Symposium on VLSI Circuits
Kameshiro Norifumi
Watanabe Takao
Ishii Tomoyuki
Mine Toshiyuki
Sano Toshiaki
Ibe Hidefumi
Akiyama Satoru
Yanagisawa Kazumasa
Ipposhi Takashi
Iwamatsu Toshiaki
Takahashi Yasuhiko
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Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films
2007
Mine Toshiyuki
Ishida Takeshi
Hamamura Hirotaka
Torii Kazuyoshi
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