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P.-Y. Lesaicherre
P.-Y. Lesaicherre
Electronic engineering
Materials science
Chemical vapor deposition
Capacitor
Thin film
5
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5
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Thin film (Ba,Sr)TiO3 over stacked RuO2 nodes for Gbit DRAM capacitors
1996
Nec Research & Development
Masaji Yoshida
Hisato Yabuta
Shuji Sone
Koichi Takemura
Toshiyuki Sakuma
Yoshitake Kato
Yoichi Miyasaka
Toshihiro Iizuka
Shintaro Yamamichi
Hiromu Yamaguchi
P.-Y. Lesaicherre
Shozo Nishimoto
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Preparaton of ECR MOCVD $SrTiO_3$ thin films and their application to a Gbit-scale DRAM stacked capacitor structure
1995
P.-Y. Lesaicherre
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Simulation of plasma processes with two-dimensional program TITAN
1991
A. Gerodolle
J. Pelletier
A. Tissier
P.-Y. Lesaicherre
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Characterization and simulation of PECVD and APCVD oxide step coverage
1990
International IEEE VLSI Multilevel Interconnection Conference
P.-Y. Lesaicherre
A. Gerodolle
P. Brouquet
N. Rossiter
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Application of BSG films as interlevel dielectric in a 1 mu m DLM process
1990
International IEEE VLSI Multilevel Interconnection Conference
A. Rey
P.-Y. Lesaicherre
E. Pourquier
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