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M.E. Burnham
M.E. Burnham
Motorola
Annealing (metallurgy)
Oxygen
Materials science
Silicon
Oxide
5
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51
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High temperature precipitate formation in high-dose oxygen implanted silicon-on-insulator material
2020
S. J. Krause
C. O. Jung
M.E. Burnham
S. R. Wilson
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Evaluation of Q/sub bd/ for electrons tunneling from the Si/SiO/sub 2/ interface compared to electron tunneling from the poly-Si/SiO/sub 2/ interface
1993
IEEE Transactions on Electron Devices
S.S. Gong
M.E. Burnham
N. D. Theodore
D.K. Schroder
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An analysis of high temperature (1150 °C) furnace annealing of buried oxide wafers formed by ion implantation
1989
Journal of Materials Research
S. R. Wilson
M.E. Burnham
Mike Kottke
R. P. Lorigan
Stephen Krause
C.O. Jung
J. A. Leavitt
L. C. McIntyre
J. Seerveld
P. Stoss
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Citations (2)
Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation
1985
MRS Proceedings
S. J. Krause
C.O. Jung
S. R. Wilson
R. P. Lorigan
M.E. Burnham
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Citations (8)
An Overview Of SOI By Implantation Of Oxygen: Materials, Devices And Circuits
1985
M.E. Burnham
S. R. Wilson
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Citations (6)
1