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Musarrat Hassan
Musarrat Hassan
Gwangju Institute of Science and Technology
Chemistry
Non-volatile memory
Electronic engineering
Resistive touchscreen
Optoelectronics
3
Papers
60
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Resistive-Switching Characteristics of for Nonvolatile Memory Applications
2009
IEEE Electron Device Letters
Dong-jun Seong
Musarrat Hassan
Hyejung Choi
Joonmyoung Lee
Jaesik Yoon
Jubong Park
Wootae Lee
Min-Suk Oh
Hyunsang Hwang
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Resistive-Switching Characteristics of Al/Pr 0.7 Ca 0.3 MnO 3 for Nonvolatile Memory Applications
2009
IEEE Electron Device Letters
Dong-jun Seong
Musarrat Hassan
Hyejung Choi
Joonmyoung Lee
Jaesik Yoon
Jubong Park
Wootae Lee
Min-Suk Oh
Hyunsang Hwang
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Citations (2)
Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications
2009
IEEE Electron Device Letters
Dong-jun Seong
Musarrat Hassan
Hyejung Choi
Joonmyoung Lee
Jaesik Yoon
Jubong Park
Wootae Lee
Min-Suk Oh
Hyunsang Hwang
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Citations (58)
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