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M. Passlack
M. Passlack
University of California, San Diego
MOSFET
Materials science
Optoelectronics
Gate oxide
Optics
3
Papers
39
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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs
2009
Microelectronic Engineering
J.S. Ayubi-Moak
B. Benbakhti
K. Kalna
G. W. Paterson
R.J.W. Hill
M. Passlack
I.G. Thayne
Asen Asenov
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Citations (11)
III-V MOSFETs for Digital Applications with Silicon Co-Integration
2008
ASDAM | International Conference on Advanced Semiconductor Devices and Microsystems
K. Kalna
Asen Asenov
J.S. Ayubi-Moak
A.J. Craven
R. Droopad
R.J.W. Hill
M. Holland
Xu Li
A. R. Long
P Longo
D.S. Macintyre
M. Passlack
G. W. Paterson
C.R. Stanley
S. Thoms
H. Zhou
I.G. Thayne
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Gate dielectrics on compound semiconductors
2005
Microelectronic Engineering
R. Droopad
M. Passlack
N. England
K. Rajagopalan
J. Abrokwah
Andrew C. Kummel
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Citations (28)
1