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Miguel Ángel Vidal-Borbolla

Universidad Autónoma de San Luis Potosí

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Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure

2016 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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RAMAN Characterization of Ge1-XSnX Allows By Using a SPACE Correlation MODEL

2016
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Ge1-xSnx Alloys Pseudomorphically Grown on Ge (001) by Sputtering

2013
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Ge1-xSnx Alloys Pseudomorphically Grown by R. F. Magnetron Sputtering

2012
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